BU2508DW Datasheet, PDF (3/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2508DW
+ 150 v nominal
adjust for ICsat
1mH
IBend
-VBB
D.U.T.
LB
12nF
Rbe
Fig.3. Switching times test circuit.
100 ^{h FE}
10
Tj = 25 C
Tj = 125 C
BU2508D
5V
1V
1
0.01
0.1
1
10
IC / A
Fig.4. Typical DC current gain. h_FE = f (I_C)
parameter V_CE
1.2 ^{VBESAT / V}
1.1
Tj = 25 C
Tj = 125 C
1
BU2508D
0.9
0.8
IC/IB=
0.7
3
0.6
4
5
0.5
0.4
0.1
1
10
IC / A
Fig.5. Typical base-emitter saturation voltage.
V_BEsat = f (I_C); parameter I_C/I_B
VCESAT / V
1
0.9
0.8
0.7
0.6
IC/IB=
5
4
3
BU2508D
0.5
Tj = 25 C
0.4
Tj = 125 C
0.3
0.2
0.1
0
0.1
1
10
IC / A
Fig.6. Typical collector-emitter saturation voltage.
V_CEsat = f (I_C); parameter I_C/I_B
VBESAT / V
1.2
Tj = 25 C
1.1
Tj = 125 C
BU2508D
1
0.9
IC=
6A
0.8
4.5A
3A
0.7
2A
0.6
0
1
2
3
4
IB / A
Fig.7. Typical base-emitter saturation voltage.
V_BEsat = f (I_B); parameter I_C
VCESAT / V
10
BU2508D
Tj = 25 C
Tj = 125 C
6A
4.5A
1
3A
IC=2A
0.1
0.1
1
10
IB / A
Fig.8. Typical collector-emitter saturation voltage.
V_CEsat = f (I_B); parameter I_C
September 1997
3
Rev 1.100