BU2508DW Datasheet, PDF (2/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2508DW
STATIC CHARACTERISTICS
T_mb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
I_CES
Collector cut-off current ²
I_CES
I_EBO
BV_EBO
R_be
V_CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
V_CEsat
V_BEsat
h_FE
h_FE
V_F
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
CONDITIONS
V_BE = 0 V; V_CE = V_CESMmax
V_BE = 0 V; V_CE = V_CESMmax;
T_j = 125 ˚C
V_EB = 7.5 V; I_C = 0 A
I_B = 600 mA
V_EB = 7.5 V
I_B = 0 A; I_C = 100 mA;
L = 25 mH
I_C = 4.5 A; I_B = 1.12 A
I_C = 4.5 A; I_B = 1.7 A
I_C = 1 A; V_CE = 5 V
I_C = 4.5 A; V_CE = 1 V
I_F = 4.5 A
MIN.
-
-
140
7.5
-
700
-
-
-
4
-
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
-
390 mA
13.5 -
V
33
-
Ω
-
-
V
-
1.0
V
-
1.1
V
13
-
5.5 7.0
1.6 2.0
V
DYNAMIC CHARACTERISTICS
T_mb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
C_c
Collector capacitance
Switching times (16 kHz line
deflection circuit)
t_s
Turn-off storage time
t_f
Turn-off fall time
Switching times (38 kHz line
deflection circuit)
t_s
Turn-off storage time
t_f
Turn-off fall time
CONDITIONS
I_E = 0 A; V_CB = 10 V; f = 1 MHz
I_Csat = 4.5 A; I_B(end) = 1.1 A; L_B = 6 µH;
-V_BB = 4 V; (-dI_B/dt = 0.6 A/µs)
I_Csat = 4.0 A; I_B(end) = 0.9 A; L_B = 6 µH;
-V_BB = 4 V; (-dI_B/dt = 0.6 A/µs)
TYP. MAX. UNIT
80
-
pF
5.0 6.0 µs
0.4 0.6 µs
4.7 5.7 µs
0.25 0.35 µs
TRANSISTOR
IC
DIODE
ICsat
t
IB
VCE
20us
26us
64us
IBend
t
t
Fig.1. Switching times waveforms.
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.2. Switching times definitions.
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100