BTA204X Datasheet, PDF (3/6 Pages) NXP Semiconductors – Three quadrant triacs high commutation

Philips Semiconductors
Three quadrant triacs
high commutation
Product specification
BTA204X series B and C
Ptot / W
8
BT136
Ths(max) / C
81
7
6
1
5
4
3
= 180
120
90
60
30
86.5
92
97.5
103
108.5
2
114
1
119.5
0
125
0
1
2
3
4
5
IT(RMS) / A
Fig.1. Maximum on-state dissipation, P_tot, versus rms
on-state current, I_T(RMS), where α = conduction angle.
1000 ^{ITSM / A}
BT136
IT
ITSM
T
time
Tj initial = 25 C max
100
dI_T/dt limit
T2- G+ quadrant
10
10us
100us
1ms
T/s
10ms
100ms
Fig.2. Maximum permissible non-repetitive peak
on-state current I_TSM, versus pulse width t_p, for
sinusoidal currents, t_p ≤ 20ms.
ITSM / A
30
25
20
15
BT136
IT
ITSM
T
time
Tj initial = 25 C max
10
5
01
10
100
1000
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current I_TSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
IT(RMS) / A
5
4
BT136X
92 C
3
2
1
0-50
0
50
100
150
Ths / C
Fig.4. Maximum permissible rms current I_T(RMS) ,
versus heatsink temperature T_hs.
12 ^{IT(RMS) / A}
BT136
10
8
6
4
2
0
0.01
0.1
1
10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current I_T(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; T_hs ≤ 92˚C.
VGT(Tj)
1.6 ^{VGT(25 C)}
BT136
1.4
1.2
1
0.8
0.6
0.4-50
0
50
100
150
Tj / C
Fig.6. Normalised gate trigger voltage
V_GT(T_j)/ V_GT(25˚C), versus junction temperature T_j.
December 1998
3
Rev 1.000