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BTA204X Datasheet, PDF (2/6 Pages) NXP Semiconductors – Three quadrant triacs high commutation
Philips Semiconductors
Three quadrant triacs
high commutation
Product specification
BTA204X series B and C
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Thermal resistance
junction to heatsink
Rth j-a
Thermal resistance
junction to ambient
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
MIN. TYP. MAX. UNIT
-
-
5.5 K/W
-
-
7.2 K/W
-
55
- K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
IGT
Gate trigger current2
IL
Latching current
IH
Holding current
VT
On-state voltage
VGT
Gate trigger voltage
ID
Off-state leakage current
CONDITIONS
BTA204X-
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ G-
T2- G-
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
VD = 12 V; IGT = 0.1 A
IT = 5 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A;
Tj = 125 ˚C
VD = VDRM(max); Tj = 125 ˚C
MIN. TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.4
-
0.7
0.25 0.4
-
0.1
MAX.
...B ...C
50
35
50
35
50
35
30
20
45
30
30
20
30
20
1.7
1.5
-
0.5
UNIT
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
BTA204X- ...B ...C
dVD/dt
dIcom/dt
tgt
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; gate open circuit
VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 4 A;
dVcom/dt = 20V/µs; gate open circuit
ITM = 12 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
1000
6
-
1000
3
-
TYP.
-
-
2
UNIT
V/µs
A/ms
µs
2 Device does not trigger in the T2-, G+ quadrant.
December 1998
2
Rev 1.000