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BTA204SD Datasheet, PDF (3/8 Pages) NXP Semiconductors – Three quadrant triacs guaranteed commutation
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Philips Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA204S series D, E and F
BTA204M series D, E and F
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
Rth j-mb
Rth j-a
Thermal resistance
full cycle
-
junction to mounting base half cycle
-
Thermal resistance
pcb (FR4) mounted; footprint as in Fig.14 -
junction to ambient
TYP.
-
-
75
MAX.
3.0
3.7
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP.
MAX.
UNIT
BTA204S (or BTA204M)-
...D ...E ...F
IGT
Gate trigger current2 VD = 12 V; IT = 0.1 A
T2+ G+
T2+ G-
T2- G-
IL
Latching current
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
IH
Holding current
VD = 12 V; IGT = 0.1 A
-
-
5
10 25 mA
-
-
5
10 25 mA
-
-
5
10 25 mA
-
-
6
12 20 mA
-
-
9
18 30 mA
-
-
6
12 20 mA
-
-
6
12 20 mA
VT
On-state voltage
IT = 5 A
-
1.4
1.7
V
VGT
Gate trigger voltage VD = 12 V; IT = 0.1 A
-
0.7
1.5
V
VD = 400 V; IT = 0.1 A;
0.25 0.4
-
V
Tj = 125 ˚C
ID
Off-state leakage
VD = VDRM(max); Tj = 125 ˚C
-
0.1
0.5
mA
current
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BTA204S (or BTA204M)- ...D ...E ...F
dVD/dt
Critical rate of rise of
off-state voltage
VDM = 67% VDRM(max);
20
Tj = 125 ˚C; exponential
waveform; gate open circuit
30 50
-
dIcom/dt Critical rate of change VDM = 400 V; Tj = 125 ˚C;
1.0 2.0 2.5
-
of commutating current IT(RMS) = 4 A;
dVcom/dt = 20V/µs; gate
open circuit
dIcom/dt Critical rate of change VDM = 400 V; Tj = 125 ˚C;
5.0
-
-
-
of commutating current IT(RMS) = 4 A;
dVcom/dt = 0.1V/µs; gate
open circuit
tgt
Gate controlled turn-on ITM = 12 A; VD = VDRM(max);
-
-
-
2
time
IG = 0.1 A; dIG/dt = 5 A/µs
- V/µs
- A/ms
- A/ms
-
µs
2 Device does not trigger in the T2-, G+ quadrant.
December 1998
3
Rev 1.000
 ▷