BTA204SD Datasheet, PDF (2/8 Pages) NXP Semiconductors – Three quadrant triacs guaranteed commutation

Philips Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA204S series D, E and F
BTA204M series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed commutation
triacs in a plastic envelope suitable for
surface mounting, intended for use in
motor control circuits or with other
highly inductive loads. These devices
balance the requirements of
commutation performance and gate
sensitivity. The "sensitive gate" E
series and "logic level" D series are
intended for interfacing with low power
drivers, including micro controllers.
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
V_DRM
I_T(RMS)
I_TSM
BTA204S (or BTA204M)- 500D 600D -
BTA204S (or BTA204M)- 500E 600E 800E
BTA204S (or BTA204M)- 500F 600F 800F
Repetitive peak
500 600 800 V
off-state voltages
RMS on-state current
4
4
4
A
Non-repetitive peak on-state 25 25 25 A
current
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN Standard Alternative
tab
NUMBER
S
M
1
MT1
gate
T2
T1
2
MT2
MT2
3
gate
MT1
2
G
tab
MT2
MT2
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_DRM
Repetitive peak off-state
voltages
-500
-
500¹
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
V_GM
P_GM
P_G(AV)
T_stg
T_j
RMS on-state current
full sine wave;
-
Non-repetitive peak
T_mb ≤ 107 ˚C
full sine wave;
on-state current
T_j = 25 ˚C prior to
surge
t = 20 ms
-
t = 16.7 ms
-
I²t for fusing
t = 10 ms
-
Repetitive rate of rise of
on-state current after
triggering
I_TM = 6 A; I_G = 0.2 A;
dI_G/dt = 0.2 A/µs
Peak gate current
-
Peak gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms
-
period
Storage temperature
-40
Operating junction
-
temperature
MAX.
-600
600¹
4
25
27
3.1
100
2
5
5
0.5
150
125
UNIT
-800
800
V
A
A
A
A²s
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
December 1998
2
Rev 1.000