BLP8G10S-45P_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – Power LDMOS transistor

NXP Semiconductors
BLP8G10S-45P; BLP8G10S-45PG
Power LDMOS transistor
5. Thermal characteristics
Table 5. Thermal characteristics
Values specified for entire device.
Symbol Parameter
R_th(j-case) thermal resistance from junction to case
Conditions
T_case = 85 C; P_L = 5 W
Typ Unit
0.85 K/W
6. Characteristics
Table 6. DC characteristics
T_case = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
V_(BR)DSS drain-source breakdown voltage V_GS = 0 V; I_D = 0.4 mA 65
V_GS(th) gate-source threshold voltage V_DS = 10 V; I_D = 40 mA 1.5
I_DSS
drain leakage current
V_GS = 0 V; V_DS = 28 V -
I_DSX
drain cut-off current
V_GS = V_GS(th) + 3.75 V; -
V_DS = 10 V
I_GSS
gate leakage current
V_GS = 11 V; V_DS = 0 V -
g_fs
forward transconductance
V_DS = 10 V; I_D = 2 A
-
R_DS(on) drain-source on-state resistance V_DS = 10 V; I_D = 1.4 A -
V_GS = V_GS(th) + 3.75 V
-
-
V
1.9 2.3 V
-
1.4 A
7.3 -
A
-
140 nA
3.0 -
S
500 -
m
Table 7. RF characteristics
Test signal: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test model 1;
1-64 DPCH; f₁ = 952.5 MHz; f₂ = 957.5 MHz; RF performance at V_DS = 28 V; I_Dq = 224 mA;
T_case = 25 C; per section in a class-AB production circuit unless otherwise specified.
Symbol Parameter
Conditions Min Typ Max Unit
G_p
RL_in
_D
ACPR
power gain
input return loss
drain efficiency
adjacent channel power ratio
P_L = 2.5 W 20
P_L = 2.5 W -
P_L = 2.5 W 18
P_L = 2.5 W -
20.8 -
dB
18 9
dB
19.8 -
%
49 43 dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLP8G10S-45P and BLP8G10S-45PG are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V_DS = 28 V; I_Dq = 224 mA; P_L = 25 W; f = 728 MHz.
BLP8G10S-45P_8G10S-45PG
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 July 2013
© NXP B.V. 2013. All rights reserved.
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