BLP8G10S-45P_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Power LDMOS transistor

BLP8G10S-45P;
BLP8G10S-45PG
Power LDMOS transistor
Rev. 1 — 25 July 2013
Product data sheet
1. Product profile
1.1 General description
The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power
transistors for base station applications at frequencies from 700 MHz to 1000 MHz.
Table 1. Application performance
Typical RF performance at T_case = 25 C; I_Dq = 224 mA in common source class-AB production
circuit.
Test signal
f
V_DS
P_L(AV)
G_p
_D
ACPR
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
960
28
2.5
20.8 19.8 49 ^[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF;
carrier spacing = 5 MHz; per section unless otherwise specified.
1.2 Features and benefits
 High efficiency
 Excellent ruggedness
 Designed for broadband operation (700 MHz to 1000 MHz)
 Excellent thermal stability
 High power gain
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 W-CDMA
 LTE
 GSM