BLF6G27L-40P_15 Datasheet, PDF(3/15 Page) NXP Semiconductors

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BLF6G27L-40P_15 Datasheet, PDF (3/15 Pages) NXP Semiconductors – Power LDMOS transistor

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NXP Semiconductors

BLF6G27L-40P;BLF6G27LS-40P(G)

Power LDMOS transistor

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min Max Unit

VDS

drain-source voltage

VGS

gate-source voltage

Tstg

storage temperature

junction temperature

65 V

ï0.5 +13 V

ï65 +150 ï°C

[1] -

225 ï°C

[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF

calculator.

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter

Rth(j-c) thermal resistance from junction to case

Conditions

Tcase = 80 ï°C; PL = 40 W

Typ Unit

0.7 K/W

6. Characteristics

Table 6. Characteristics

Tj = 25 ï°C; per section unless otherwise specified.

Symbol Parameter

Conditions

V(BR)DSS

VGS(th)

IDSS

IDSX

IGSS

gfs

RDS(on)

drain-source breakdown voltage

gate-source threshold voltage

drain leakage current

drain cut-off current

gate leakage current

forward transconductance

drain-source on-state resistance

VGS = 0 V; ID = 0.4 mA

VDS = 10 V; ID = 40 mA

VGS = 0 V; VDS = 28 V

VGS = VGS(th) + 3.75 V;

VDS = 10 V

VGS = 11 V; VDS = 0 V

VDS = 10 V;

ID = 2000 mA

VGS = VGS(th) + 3.75 V;

ID = 1400 mA

Min Typ

65 -

1.4 1.8

5.96 7.2

Max Unit

2.4 V

1.4 ïA

150 nA

1.8 2.9 -

0.14 0.36 -

BLF6G27L-40P_LS-40P_LS-40PG

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 3 â 14 January 2015

3 of 15

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