BLF6G27L-40P_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – Power LDMOS transistor

BLF6G27L-40P;
BLF6G27LS-40P(G)
Power LDMOS transistor
Rev. 3 — 14 January 2015
Product data sheet
1. Product profile
1.1 General description
40 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz, also suitable for operation at 2300 MHz to 2400 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a common source class-AB production test circuit.
Test signal
f
I_Dq
V_DS P_L(AV) G_p _D ACPR_885k ACPR_5M
(MHz)
(mA) (V) (W) (dB) (%) (dBc)
(dBc)
IS-95
2500 to 2700 450 28 12
17.5 30 46 ^[1]
-
Single carrier W-CDMA 2500 to 2700 450 28 20
17.5 37 -
35 ^[2]
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2] 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is
3.84 MHz.
1.2 Features and benefits
 Excellent ruggedness
 High efficiency
 Low thermal resistance providing excellent thermal stability
 Designed for broadband operation (2500 MHz to 2700 MHz)
 Lower output capacitance for improved performance in Doherty applications
 Designed for low memory effects providing excellent pre-distortability
 Design optimized for gull-wing and straight lead versions
 Internally matched for ease of use
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range