BGF944 Datasheet, PDF (3/12 Pages) NXP Semiconductors – GSM900 EDGE power module

Philips Semiconductors
GSM900 EDGE power module
Product specification
BGF944
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V_S
P_D
P_L
T_stg
T_mb
PARAMETER
DC supply voltage
input drive power
load power
storage temperature
operating mounting base temperature
MIN.
−
−
−
−30
−20
MAX.
30
100
24
+100
+90
UNIT
V
mW
W
°C
°C
CHARACTERISTICS
T_mb = 25 °C; V_S = 26 V; P_L = 2.5 W; f = 920 to 960 MHz; Z_S = Z_L = 50 Ω; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_DQ
P_1dB
G_p
∆G_{p freq}
quiescent current (pin 2)
load power
power gain
gain flatness over frequency
range
P_D = 0 mW
at 1 dB gain compression
∆G_{p pwr}
G_OB
gain flatness over power band P_L = 25 mW up to 2.5 W
out of band gain
small signal, P_D = 0 dBm;
f < 920 MHz, f > 960 MHz
VSWR_in
IMD_r
input VSWR
reverse intermodulation
H₂
second harmonic
H₃
third harmonic
stability
ruggedness
f_i = f_c ±200 kHz;
P_carrier = 2.5 W;
P_interference = −40 dBc;
VSWR ≤ 3 : 1 through all
phases; V_S2 = 25 to 28 V
VSWR = 10 : 1 through all
phases; P_L = 5 W
EDGE (P_L = 2.5 W average)
η
efficiency
SR200
SR400
spectral regrowth;
EDGE GSM signal
200 kHz
400 kHz
EVM_rms
EVM_M
rms EDGE signal distortion
peak EDGE signal distortion
Intermodulation distortion (P_L = 2.5 W average)
d₃
third order intermodulation carrier spacing = 200 kHz
d₅
fifth order intermodulation
d₇
seventh order intermodulation
MIN.
−
13
27
−
TYP.
280
17
29
0.2
MAX.
320
−
31
1
UNIT
mA
W
dB
dB
−0.8
−
−
−
−0.2
−
1.6 : 1
−66
+0.2
dB
G_{Pi max} + 1 dB
note 1
2:1
−60
dBc
−
−38
−35
dBc
−
−61
−58
dBc
all spurious outputs more than 60 dB
below desired signal
no degradation in output power
12
15
−
%
−
−36
−35
dBc
−
−65
−63
dBc
−
0.4
1.2
%
−
1.2
4
%
−
−45
−40
dBc
−
−52
−
dBc
−
−60
−
dBc
Note
1. G_Pi is small signal in-band gain.
2003 Jun 06
3