BFX34 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN switching transistor

Philips Semiconductors
NPN switching transistor
Product specification
BFX34
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
T_case ≤ 25 °C
T_amb ≤ 25 °C
MIN.
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
120
60
6
2
5
1.5
5
0.87
+150
200
+150
UNIT
V
V
V
A
A
A
W
W
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
R_{th j-c}
thermal resistance from junction to ambient in free air
thermal resistance from junction to case
VALUE
200
35
UNIT
K/W
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
emitter cut-off current
h_FE
DC current gain
V_CEsat
V_BEsat
C_c
C_e
f_T
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
Switching times (between 10% and 90% levels)
t_on
turn-on time
t_off
turn-off time
CONDITIONS
I_E = 0; V_CB = 60 V
I_C = 0; V_EB = 4 V
I_C = 1 A; V_CE = 2 V
I_C = 1.5 A; V_CE = 0.6 V
I_C = 2 A; V_CE = 2 V
I_C = 5 A; I_B = 0.5 A
I_C = 5 A; I_B = 0.5 A
I_E = i_e = 0; V_CB = 10 V;
f = 1 MHz
I_C = i_c = 0; V_EB = 0.5 V;
f = 1 MHz
I_C = 0.5 A; V_CE = 5 V;
f = 100 MHz
MIN.
−
−
−
−
40
−
−
−
TYP.
−
−
130
60
110
0.77
1.43
36
MAX.
10
10
−
−
150
1
1.8
−
UNIT
µA
µA
V
V
pF
−
440 −
pF
70
100 −
MHz
I_Con = 5 A; I_Bon = 0.5 A; −
I_Boff = − 0.5 A
−
0.2 0.6 µs
0.34 1.2 µs
1997 Apr 22
3