BFX34 Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN switching transistor

Philips Semiconductors
NPN switching transistor
Product specification
BFX34
FEATURES
• High current (max. 2 A)
• Low voltage (max. 60 V).
APPLICATIONS
• High-current switching, e.g. inverters and switching
regulators.
DESCRIPTION
NPN switching transistor in a TO-39 metal package.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpag1e
2
3
3
2
1
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
V_CBO
V_CEO
I_C
P_tot
h_FE
f_T
t_off
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
turn-off time
CONDITIONS
MIN.
open emitter
−
open base
−
−
T_case ≤ 25 °C
−
I_C = 2 A; V_CE = 2 V
40
I_C = 0.5 A; V_CE = 5 V; f = 100 MHz 70
I_Con = 5 A; I_Bon = 0.5 A;
−
I_Boff = −0.5 A
MAX.
120
60
2
5
150
−
1.2
UNIT
V
V
A
W
MHz
µs
1997 Apr 22
2