BFT45 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP high-voltage transistor

Philips Semiconductors
PNP high-voltage transistor
Product specification
BFT45
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
T_case ≤ 50 °C
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−250
−250
−5
−500
−1
−200
5
+150
200
+150
UNIT
V
V
V
mA
A
mA
W
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
R_{th j-c}
thermal resistance from junction to ambient in free air
thermal resistance from junction to case
VALUE
200
30
UNIT
K/W
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
C_c
f_T
collector cut-off current
I_E = 0; V_CB = −200 V
−
−
−5 µA
emitter cut-off current
I_C = 0; V_EB = −3 V
−
−
−5 µA
DC current gain
I_C = −1 mA; V_CE = −10 V
30 −
−
I_C = −10 mA; V_CE = −10 V
50 −
150
I_C = −100 mA; V_CE = −10 V; note 1
50 −
−
collector-emitter saturation voltage I_C = −10 mA; I_B = −1 mA
−
−
−0.5 V
I_C = −100 mA; I_B = −10 mA
−
−
−1.4 V
I_C = −500 mA; I_B = −100 mA; note 1
−
−
−3 V
base-emitter saturation voltage I_C = −10 mA; I_B = −1 mA
−
−
−0.5 V
I_C = −100 mA; I_B = −10 mA
−
−
−0.9 V
I_C = −500 mA; I_B = −100 mA; note 1
−
−
−1.2 V
collector capacitance
I_E = i_e = 0; V_CB = −20 V; f = 1 MHz
−
−
15 pF
transition frequency
I_C = −15 mA; V_CE = −10 V; f = 100 MHz −
70 −
MHz
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
1997 Apr 18
3