BFT45 Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP high-voltage transistor

Philips Semiconductors
PNP high-voltage transistor
Product specification
BFT45
FEATURES
• Low current (max. 500 mA)
• High voltage (max. 250 V).
APPLICATIONS
• High voltage switching and amplification
• Industrial and telephone applications.
DESCRIPTION
PNP high-voltage transistor in a TO-39 metal package.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpag1e
2
3
3
2
1
MAM334
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_CM
P_tot
h_FE
C_c
f_T
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
collector capacitance
transition frequency
CONDITIONS
open emitter
open base
T_case ≤ 50 °C
I_C = −10 mA; V_CE = −10 V
I_E = i_e = 0; V_CE = −20 V; f = 1 MHz
I_C = −15 mA; V_CE = −10 V; f = 100 MHz
MIN.
−
−
−
−
50
−
−
TYP.
−
−
−
−
−
−
70
MAX.
−250
−250
−1
5
150
15
−
UNIT
V
V
A
W
pF
MHz
1997 Apr 18
2