BFT25 Datasheet, PDF(3/8 Page) NXP Semiconductors

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BFT25 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN 2 GHz wideband transistor

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Philips Semiconductors

NPN 2 GHz wideband transistor

Product speciï¬cation

BFT25

THERMAL RESISTANCE

SYMBOL

PARAMETER

Rth j-s

thermal resistance from junction to

soldering point

CONDITIONS

up to Ts = 167Â°C; note 1

Note

1. Ts = is the temperature at the soldering point of the collector tab.

THERMAL RESISTANCE

260 K/W

CHARACTERISTICS

Tj = 25 Â°C unless otherwise speciï¬ed.

SYMBOL

PARAMETER

CONDITIONS

ICBO

hFE

Cre

GUM

collector cut-off current

DC current gain

transition frequency

collector capacitance

emitter capacitance

feedback capacitance

maximum unilateral power gain

(note 1)

noise ï¬gure

IE = 0; VCB = 5 V

IC = 10 ÂµA; VCE = 1 V

IC = 1 mA; VCE = 1 V

IC = 1 mA; VCE = 1 V; f = 500 MHz

IE = ie = 0; VCB = 0.5 V; f = 1 MHz

Ic = ic = 0; VEB = 0; f = 1 MHz

IC = 1 mA; VCE = 1 V; f = 1 MHz;

Tamb = 25 Â°C

IC = 1 mA; VCE = 1 V; f = 500 MHz;

Tamb = 25 Â°C

IC = 1 mA; VCE = 1 V; f = 800 MHz;

Tamb = 25 Â°C

IC = 0.1 mA; VCE = 1 V;

f = 500 MHz; Tamb = 25 Â°C

IC = 1 mA; VCE = 1 V; f = 500 MHz;

Tamb = 25 Â°C

Note

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

GUM = 10 log ï£ï£«----1-----â------S----1---1----2S---ï£¸ï£¶-2--ï£ï£«-1---1-2----â------S----2--2-----2--ï£¸ï£¶-- dB.

MIN.

1.2

TYP.

2.3

5.5

3.8

MAX. UNIT

GHz

0.6 pF

0.5 pF

0.45 pF

November 1992

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