BFT25 Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN 2 GHz wideband transistor

Philips Semiconductors
NPN 2 GHz wideband transistor
Product specification
BFT25
DESCRIPTION
NPN transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
low power amplifiers, such as in
pocket phones, paging systems, etc.
The transistor features low current
consumption (100 µA to 1 mA); due to
its high transition frequency, it also
has excellent wideband properties
and low noise up to high frequencies.
PINNING
PIN
DESCRIPTION
Code: V1p
1 base
2 emitter
3 collector
fpage
3
1
Top view
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
V_CBO
V_CEO
I_c
P_tot
f_T
C_re
G_UM
F
PARAMETER
CONDITIONS
collector-base voltage
open emitter
collector-emitter voltage
open base
DC collector current
total power dissipation
transition frequency
feedback capacitance
maximum unilateral power gain
noise figure
up to T_s = 167 °C; note 1
I_C = 1 mA; V_CE = 1 V; f = 500 MHz;
T_amb = 25 °C
I_C = 1 mA; V_CE = 1 V; f = 1 MHz;
T_amb = 25 °C
I_C = 1 mA; V_CE = 1 V; f = 500 MHz;
T_amb = 25 °C
I_C = 1 mA; V_CE = 1 V; f = 500 MHz;
T_amb = 25 °C
TYP.
−
−
−
−
2.3
MAX.
8
5
6.5
30
−
UNIT
V
V
mA
mW
GHz
−
0.45 pF
18
−
dB
3.8
−
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_tot
T_stg
T_j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
f > 1 MHz
up to T_s = 167 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector tab.
November 1992
2
MIN.
−
−
−
−
−
−
−65
−
MAX.
8
5
2
6.5
10
30
150
175
UNIT
V
V
V
mA
mA
mW
°C
°C