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| BFS25A_CNV_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor | |||
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NXP Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFS25A
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 170 ï°C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
190 K/W
CHARACTERISTICS
Tj = 25 ï°C, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
hFE
Cre
fT
GUM
F
collector cut-off current
DC current gain
feedback capacitance
transition frequency
maximum unilateral power
gain (note 1)
noise figure
IE = 0; VCB = 5 V
IC = 0.5 mA; VCE = 1 V
IC = 0; VCB = 1 V; f = 1 MHz
IC = 1 mA; VCE = 1 V; f = 1 GHz;
Tamb = 25 ï°C
IC = 0.5 mA; VCE = 1 V; f = 1 GHz;
Tamb = 25 ï°C
ïs = ïopt; IC = 0.5 mA; VCE = 1 V; f = 1 GHz;
Tamb = 25 ï°C
ïs = ïopt; IC = 1 mA; VCE = 1 V;
f = 1 GHz; Tamb = 25 ï°C
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM
=
10
log
------------------------S----2---1----2-----------------------
ï¨1 â S11 2ï©ï¨1 â S22 2ï©
dB.
MIN. TYP. MAX. UNIT
ï
ï
50 nA
50 80 200
ï
0.3 0.45 pF
3.5 5
ï
GHz
ï
13 ï
dB
ï
1.8 ï
dB
ï
2
ï
dB
December 1997
3
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