BFS25A_CNV_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

NXP Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFS25A
FEATURES
 Low current consumption
 Low noise figure
 Gold metallization ensures
excellent reliability
 SOT323 envelope.
PINNING
PIN
DESCRIPTION
Code: N6
1 base
2 emitter
3 collector
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is designed for use in RF amplifiers
and oscillators in pagers and pocket
phones with signal frequencies up to
2 GHz.
handbook, 2 columns
3
1
Top view
2
MBC870
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_C
P_tot
h_FE
f_T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
G_UM
maximum unilateral power gain
F
noise figure
CONDITIONS
open emitter
open base
up to T_s = 170 C; note 1
I_C = 0.5 mA; V_CE = 1 V; T_j = 25 C
I_C = 1 mA; V_CE = 1 V; f = 1 GHz;
T_amb = 25 C
I_c = 0.5 mA; V_CE = 1 V; f = 1 GHz;
T_amb = 25 C
I_c = 0.5 mA; V_CE = 1 V; f = 1 GHz;
T_amb = 25 C
MIN.




50
3.5


TYP.




80
5
13
1.8
MAX.
8
5
6.5
32
200



UNIT
V
V
mA
mW
GHz
dB
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
up to T_s = 170 C; note 1
Note
1. T_s is the temperature at the soldering point of the collector tab.
MIN.





65

MAX. UNIT
8
V
5
V
2
V
6.5
mA
32
mW
+150 C
175 C
December 1997
2