BFR93AT Datasheet, PDF (3/16 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITION
open emitter
open base
open collector
T_s ≤ 75 °C; see Fig.2
THERMAL CHARACTERISTICS
SYMBOL
R_{th j-s}
PARAMETER
thermal resistance from junction to soldering point
Product specification
BFR93AT
MIN.
−
−
−
−
−
−65
−
MAX. UNIT
15
V
12
V
2
V
35
mA
150 mW
+150 °C
150 °C
VALUE
500
UNIT
K/W
200
Ptot
(mW)
150
MGU068
100
50
0
0
50
100
150
200
Ts (°C)
Fig.2 Power derating curve.
2000 Mar 09
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