BFR93AT Datasheet, PDF (2/16 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR93AT
FEATURES
• High power gain
• Gold metallization ensures
excellent reliability
• SOT416 (SC-75) package.
APPLICATIONS
Designed for use in RF amplifiers,
mixers and oscillators with signal
frequencies up to 1 GHz.
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT416 (SC-75) package. ^fpage
3
The BFR93AT uses the same die as
the SOT23 version: BFR93A.
PINNING
PIN
DESCRIPTION
1 base
2 emitter
3 collector
1
Top view
2
MBK090
Marking code: R2.
Fig.1 SOT416.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V_CBO
V_CEO
I_C
P_tot
h_FE
C_re
f_T
G_UM
F
T_j
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain
noise figure
junction temperature
open emitter
−
open base
−
−
T_s ≤ 75 °C; note 1
−
I_C = 30 mA; V_CE = 5 V
40
I_C = 0; V_CE = 5 V; f = 1 MHz;
−
T_amb = 25 °C
I_C = 30 mA; V_CE = 5 V; f = 500 MHz 4
I_C = 30 mA; V_CE = 8 V; T_amb = 25 °C;
f = 1 GHz
−
f = 2 GHz
−
I_C = 5 mA; V_CE = 8 V; f = 1 GHz;
−
Γ_s = Γ_opt
−
−
15
V
−
12
V
−
35
mA
−
150 mW
90
−
0.6 −
pF
5
−
GHz
13
−
dB
8
−
dB
1.5 −
dB
−
150 °C
Note
1. T_s is the temperature at the soldering point of the collector pin.
2000 Mar 09
2