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| BFR106 Datasheet, PDF (3/10 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor | |||
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NXP Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR106
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 70 ï°C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
210 K/W
CHARACTERISTICS
Tj = 25 ï°C unless otherwise specified.
SYMBOL
ICBO
hFE
fT
Cc
Ce
Cre
GUM
F
d2
Vo
PARAMETER
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
noise figure
second order intermodulation
distortion
output voltage
CONDITIONS
IE = 0; VCB = 10 V
IC = 50 mA; VCE = 9 V
IC = 50 mA; VCE = 9 V; f = 500 MHz;
Tamb = 25 ï°C
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 10 V; f = 1 MHz
IC = 30 mA; VCE = 6 V; f = 800 MHz;
Tamb = 25 ï°C
IC = 30 mA; VCE = 6 V; f = 800 MHz;
Tamb = 25 ï°C
note 2
note 3
MIN. TYP. MAX. UNIT
ï
ï
100 nA
25 80 ï
ï
5
ï
GHz
ï
1.5 ï
pF
ï
4.5 ï
pF
ï
1.2 ï
pF
ï
11.5 ï
dB
ï
3.5 ï
dB
ï
ï50 ï
dB
ï
350 ï
mV
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM
=
10
log
------------------------S----2---1----2-----------------------
ï¨1 â S11 2ï©ï¨1 â S22 2ï©
dB.
2. IC = 30 mA; VCE = 6 V; RL = 75 ï; Tamb = 25 ï°C;
f(pï«q) = 810 MHz; Vo = 100 mV.
3. dim = ï60 dB (DIN 45004B); IC = 50 mA; VCE = 9 V; RL = 75 ï; Tamb = 25 ï°C; f(pï«qïr) = 793.25 MHz.
September 1995
3
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