BFR106 Datasheet, PDF (2/10 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

NXP Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR106
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic SOT23 envelope. It is
primarily intended for low noise,
general RF applications.
PINNING
PIN
DESCRIPTION
Code: R7p
1 base
2 emitter
3 collector
lfpage
3
1
Top view
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_C
P_tot
h_FE
f_T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
G_UM
maximum unilateral power gain
V_o
output voltage
CONDITIONS
open emitter
open base
up to T_s = 70 C; note 1
I_C = 50 mA; V_CE = 9 V; T_amb = 25 C
I_C = 50 mA; V_CE = 9 V; f = 500 MHz;
T_amb = 25 C
I_C = 30 mA; V_CE = 6 V; f = 800 MHz;
T_amb = 25 C
I_C = 50 mA; V_CE = 9 V; R_L = 75 ;
T_amb = 25 C; d_im = 60 dB;
f_{(pqr)} = 793.25 MHz
MIN.




25



TYP.




80
5
11.5
350
MAX.
20
15
100
500




UNIT
V
V
mA
mW
GHz
dB
mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to T_s = 70 C; note 1
Note
1. T_s is the temperature at the soldering point of the collector tab.
MIN.





65

MAX.
20
15
3
100
500
150
175
UNIT
V
V
V
mA
mW
C
C
September 1995
2