BFQ67W Datasheet, PDF (3/10 Pages) NXP Semiconductors – NPN 8 GHz wideband transistor

Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFQ67W
THERMAL RESISTANCE
SYMBOL
R_{th j-s}
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T_s = 118 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T_j = 25 °C, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
h_FE
C_c
C_e
C_re
f_T
G_UM
F
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
noise figure
I_E = 0; V_CB = 5 V
I_C = 15 mA; V_CE = 5 V
I_E = i_e = 0; V_CB = 8 V; f = 1 MHz
I_C = i_c = 0; V_EB = 0.5 V; f = 1 MHz
I_C = 0; V_CB = 8 V; f = 1 MHz
I_C = 15 mA; V_CE = 8 V; f = 2 GHz;
T_amb = 25 °C
I_C = 15 mA; V_CE = 8 V; f = 1 GHz
T_amb = 25 °C
I_C = 15 mA; V_CE = 8 V; f = 2 GHz;
T_amb = 25 °C
Γ_s = Γ_opt; I_C = 5 mA; V_CE = 8 V;
f = 1 GHz
Γ_s = Γ_opt; I_C = 15 mA; V_CE = 8 V;
f = 1 GHz
Γ_s = Γ_opt; I_C = 5 mA; V_CE = 8 V;
f = 2 GHz
I_C = 5 mA; V_CE = 8 V;
f = 2 GHz; Z_s = 60 Ω
Γ_s = Γ_opt; I_C = 15 mA; V_CE = 8 V;
f = 2 GHz
I_C = 5 mA; V_CE = 8 V;
f = 2 GHz; Z_s = 60 Ω
Note
1. G_UM is the maximum unilateral power gain, assuming S₁₂ is zero and
G_UM = 10 log -_---₁-----–------_S----₁---₁----₂^S---_-²--_-¹---₁-²----–------_S----₂--₂-----₂--_-- dB.
THERMAL RESISTANCE
190 K/W
MIN. TYP. MAX. UNIT
−
−
50
60 100 −
−
0.7 −
−
1.3 −
−
0.5 −
−
8
−
nA
pF
pF
pF
GHz
−
13 −
dB
−
8
−
dB
−
1.3 −
dB
−
2
−
dB
−
2.2 −
dB
−
2.5 −
dB
−
2.7 −
dB
−
3
−
dB
September 1995
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