BFQ67W Datasheet, PDF (2/10 Pages) NXP Semiconductors – NPN 8 GHz wideband transistor

Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFQ67W
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability
• SOT323 envelope.
PINNING
PIN
DESCRIPTION
Code: V2
1 base
2 emitter
3 collector
handbook, 2 columns
3
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is designed for wideband
applications such as satellite TV
tuners and RF portable
communications equipment up to
2 GHz.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_C
P_tot
h_FE
f_T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
G_UM
maximum unilateral power gain
F
noise figure
1
Top view
2
MBC870
Fig.1 SOT323.
CONDITIONS
open emitter
open base
up to T_s = 118 °C; note 1
I_C = 15 mA; V_CE = 5 V; T_j = 25 °C
I_C = 15 mA; V_CE = 8 V; f = 2 GHz;
T_amb = 25 °C
I_c = 15 mA; V_CE = 8 V; f = 1 GHz;
T_amb = 25 °C
I_c = 5 mA; V_CE = 8 V; f = 1 GHz
MIN.
−
−
−
−
60
−
−
−
TYP.
−
−
−
−
100
8
13
1.3
MAX. UNIT
20 V
10 V
50 mA
300 mW
−
−
GHz
−
dB
−
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
up to T_s = 118 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector tab.
MIN.
−
−
−
−
−
−65
−
MAX.
20
10
2.5
50
300
150
175
UNIT
V
V
V
mA
mW
°C
°C
September 1995
2