BFQ235A Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN video transistor

Discrete Semiconductors
NPN video transistor
Product specification
BFQ235A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-s}
thermal resistance from junction to soldering point T_s ≤ 100 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
VALUE
25
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V_(BR)CBO
V_(BR)CEO
V_(BR)CER
collector-base breakdown voltage I_C = 0.1 mA; I_E = 0
collector-emitter breakdown voltage I_C = 10 mA; I_B = 0
collector-emitter breakdown voltage I_C = 10 mA; R_BE = 100 Ω
115 −
95 −
110 −
V_(BR)EBO
I_CES
I_CBO
emitter-base breakdown voltage
collector cut-off current
collector cut-off current
I_E = 0.1 mA; I_C = 0
I_B = 0; V_CE = 50 V
I_E = 0; V_CB = 50 V
3
−
−
−
−
−
h_FE
DC current gain
I_C = 50 mA; V_CE = 10 V; T_amb = 25 °C; 20 35
see Fig.4
f_T
transition frequency
I_C = 50 mA; V_CE = 10 V; f = 100 MHz; 0.8 1.2
T_amb = 25 °C; see Fig.6
C_cb
collector-base capacitance
I_C = 0; V_CB = 10 V; f = 1 MHz;
T_amb = 25 °C; see Fig.5
−
2
−
V
−
V
−
V
−
V
100 µA
20 µA
−
−
GHz
−
pF
handboo⁴k,⁰h⁰alfpage
IC
(mA)
300
MBB887
200
100
0
0
20
40
60
80
VCEO (V)
handbook, h⁴alfpage
Ptot
(W)
3
MBB888
2
1
0
0
50
100
150
200
Ts (^oC)
1998 Oct 06
Fig.2 DC SOAR.
Fig.3 Power derating curve.
3