BFQ235A Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN video transistor

Discrete Semiconductors
NPN video transistor
Product specification
BFQ235A
FEATURES
• High breakdown voltages
• Low output capacitance
• High gain bandwidth
• Good thermal stability
• Gold metallization ensures
excellent reliability.
APPLICATIONS
• CRT amplifier buffer/driver in
high-resolution colour graphics
monitors.
DESCRIPTION
NPN video transistor in a SOT128B
(TO-202) plastic package.
PNP complement: BFQ255A.
fpage
PINNING
PIN
DESCRIPTION
1 emitter
2 collector
3 base
123
MGA323
Fig.1 Simplified outline
(SOT128B; TO-202).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
V_CBO
V_CER
I_C
P_tot
h_FE
f_T
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
open emitter
−
R_BE = 100 Ω
−
−
T_s ≤ 100 °C; note 1
−
I_C = 50 mA; V_CE = 10 V; T_amb = 25 °C 20
I_C = 50 mA; V_CE = 10 V; T_amb = 25 °C 0.8
Note
1. T_s is the temperature at the soldering point of the collector pin.
TYP.
−
−
−
−
35
1.2
MAX.
115
110
300
3
−
−
UNIT
V
V
mA
W
GHz
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_CER
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
R_BE = 100 Ω
open collector
T_s ≤ 100 °C; note 1; see Fig.3
Note
1. T_s is the temperature at the soldering point of the collector pin.
1998 Oct 06
2
MIN.
−
−
−
−
−
−
−65
−
MAX.
115
95
110
3
300
3
+150
175
UNIT
V
V
V
V
mA
W
°C
°C