BFQ166 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN video transistor

Philips Semiconductors
NPN video transistor
Product specification
BFQ166
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction to soldering point
CONDITIONS
T_s = 105 °C; P_tot = 2 W;
notes 1 and 2
VALUE
35
Notes
1. T_s is the temperature at the soldering point of the collector lead.
2. Device mounted on a printed-circuit board measuring 40 × 40 × 1 mm (collector pad 35 × 17 mm).
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_(BR)CBO
V_(BR)CER
V_(BR)CEO
I_CES
h_FE
C_c
C_cb
collector-base breakdown voltage
collector-emitter breakdown voltage
collector-emitter breakdown voltage
collector-emitter cut-off current
DC current gain
collector capacitance
collector-base capacitance
f_T
transition frequency
CONDITIONS
MIN. TYP. MAX. UNIT
I_C = 5 mA; I_E = 0
20
I_C = 10 mA; R_BE = 100 Ω
19
I_C = 10 mA; I_B = 0
10
V_CE = 10 V; V_BE = 0
−
I_C = 300 mA; V_CE = 5 V; see Fig.4 50
I_E = i_e = 0; V_CB = 5 V; f = 1 MHz −
I_C = i_c = 0; V_CB = 5 V; f = 1 MHz; −
see Fig.6
−
−
V
−
−
V
−
−
V
−
100 µA
60 −
4.5 −
pF
3.2 −
pF
I_C = 300 mA; V_CE = 5 V;
f = 100 MHz; T_amb = 25 °C;
see Fig.5
1
−
−
GHz
1997 Oct 02
3