BFQ166 Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN video transistor

Philips Semiconductors
NPN video transistor
Product specification
BFQ166
FEATURES
•Low output capacitance
• High gain bandwidth
• Good thermal stability
• Gold metallization ensures
excellent reliability
• High current applicability
• Surface mounting.
APPLICATIONS
• Video amplifier cascode driver in
high-resolution colour graphics
monitors.
DESCRIPTION
NPN video transistor in a SOT223
plastic package.
PINNING
PIN
DESCRIPTION
1 emitter
2 base
3 emitter
4 collector
page
4
1
Top view
2
3
MSB002 - 1
Fig.1 Simplified outline
(SOT223).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CER
I_C
P_tot
h_FE
f_T
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
open emitter
R_BE = 100 Ω
T_s ≤ 105 °C; note 1
I_C = 300 mA; V_CE = 5 V; see Fig.4
I_C = 300 mA; V_CE = 5 V; f = 100 MHz;
T_amb = 25 °C
Note
1. T_s is the temperature at the soldering point of the collector lead.
MIN.
−
−
−
−
50
1
TYP.
−
−
−
−
60
−
MAX. UNIT
20
V
19
V
500 mA
2
W
−
−
GHz
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_CER
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
R_BE = 100 Ω
open collector
CONDITIONS
T_s ≤ 105 °C; note 1; see Fig.3
Note
1. T_s is the temperature at the soldering point of the collector lead.
MIN.
−
−
−
−
−
−
−65
−
MAX. UNIT
20
V
10
V
19
V
3
V
500 mA
2
W
+150 °C
175 °C
1997 Oct 02
2