BFQ161 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN video transistor

Philips Semiconductors
NPN video transistor
Product specification
BFQ161
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-s}
R_{th j-a}
R_{th s-a}
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
thermal resistance from soldering point to ambient
note 1
Note
1. T_s is the temperature at the soldering point of the collector pin, 4 mm from the body.
VALUE
75
175
100
UNIT
K/W
K/W
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CES
h_FE
C_cb
C_c
f_T
collector-base breakdown voltage I_C = 5 mA; I_E = 0
20
collector-emitter breakdown voltage I_C = 10 mA; I_B = 0
10
emitter-base breakdown voltage I_E = 0.1 mA; I_C = 0
3
collector-emitter cut-off current
I_B = 0; V_CE = 10 V
−
DC current gain
I_C = 300 mA; V_CE = 5 V;
25
T_amb = 25 °C; see Fig.4
I_C = 100 mA; V_CE = 5 V;
40
T_amb = 25 °C; see Fig.4
collector-base capacitance
I_C = 0; V_CB = 5 V; f = 1 MHz;
−
see Fig.5
collector capacitance
I_E = i_e = 0; V_CB = 5 V; f = 1 MHz −
transition frequency
I_C = 300 mA; V_CE = 5 V; see Fig.6 1
−
−
V
−
−
V
−
−
V
−
100 µA
−
−
50
−
4.3 −
pF
6
−
pF
−
−
GHz
1997 Oct 02
3