BFQ161 Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN video transistor

Philips Semiconductors
NPN video transistor
Product specification
BFQ161
FEATURES
• Low output capacitance
• High gain bandwidth
• High current applicability
• Good thermal stability
• Gold metallization ensures
excellent reliability.
APPLICATIONS
• Pre-stage driver in high resolution
colour graphics monitors.
DESCRIPTION
NPN video transistor in a SOT54
(TO-92) plastic package.
PINNING
PIN
DESCRIPTION
1 base
2 collector
3 emitter
1
page
2
3
MSB033
Fig.1 Simplified outline
(SOT54; TO-92).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
V_CBO
collector-base voltage
open emitter
−
V_CER
collector-emitter voltage
R_BE = 100 Ω
−
I_C
collector current (DC)
−
P_tot
total power dissipation
T_s ≤ 75 °C; note 1
−
h_FE
DC current gain
I_C = 300 mA; V_CE = 5 V
25
f_T
transition frequency
I_C = 300 mA; V_CE = 5 V; T_amb = 25 °C
1
T_j
junction temperature
−
Note
1. T_s is the temperature at the soldering point of the collector pin, 4 mm from the body.
MAX.
20
19
500
1
−
−
150
UNIT
V
V
mA
W
GHz
°C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V_CBO
V_CEO
V_CER
V_EBO
I_C
P_tot
T_stg
T_j
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
CONDITIONS
open emitter
open base
R_BE = 100 Ω
open collector
T_s ≤ 75 °C; notes 1 and 2; see Fig.3
MIN.
−
−
−
−
−
−
−65
−
Notes
1. T_s is the temperature at the soldering point of the collector pin, 4 mm from the body.
2. Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm².
MAX.
20
10
19
3
500
1
+150
150
UNIT
V
V
V
V
mA
W
°C
°C
1997 Oct 02
2