BFG21W Datasheet, PDF (3/12 Pages) NXP Semiconductors – UHF power transistor

Philips Semiconductors
UHF power transistor
Product specification
BFG21W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
CONDITIONS
open emitter
open base
open collector
T_s ≤ 60 °C; note 1
Note
1. T_s is the temperature at the soldering point of the emitter pins.
MIN.
−
−
−
−
−
−65
−
MAX.
15
4.5
1
500
600
+150
150
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction to
soldering point
CONDITIONS
T_s ≤ 60 °C; P_tot = 600 mW; note 1
Note
1. T_s is the temperature at the soldering point of the emitter pins.
VALUE
150
UNIT
K/W
10³
handbook, full pagewidth
MGM219
Rth
(K/W)
10²
10
1
10^−6
δ=
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
10^−5
10^−4
10^−3
10^−2
P
δ
=
tp
T
tp
t
T
10^−1
tp (s)
1
At temperature stabilization solder point has been reached.
Fig.2 Transient thermal resistance as a function of pulse time; typical values.
1998 Jul 06
3