BFG21W Datasheet, PDF (2/12 Pages) NXP Semiconductors – UHF power transistor

Philips Semiconductors
UHF power transistor
Product specification
BFG21W
FEATURES
• High power gain
• High efficiency
• 1.9 GHz operating area
• Linear and non-linear operation.
PINNING
PIN
1, 3
2
4
DESCRIPTION
emitter
base
collector
APPLICATIONS
• Common emitter class-AB output stage in hand held
radio equipment at 1.9 GHz such as DECT, PHS, etc.
handbook, halfpage
3
4
• Driver for DCS1800, 1900.
DESCRIPTION
NPN double polysilicon bipolar power transistor with
buried layer for low voltage medium power applications
encapsulated in a plastic, 4-pin dual-emitter SOT343R
package.
2
Top view
1
MSB842
Marking code: P1.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
RF performance at T_s ≤ 60 °C in a common emitter test circuit.
MODE OF OPERATION
f
V_CE
(GHz)
(V)
Pulsed class-AB; δ < 1 : 2; t_p = 5 ms
1.9
3.6
P_L
(dBm)
26
G_p
(dB)
≥10
η_C
(%)
typ.55
1998 Jul 06
2