BDP32 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP medium power transistor

Philips Semiconductors
PNP medium power transistor
Product specification
BDP32
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_{th j-a}
R_{th j-s}
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
91
K/W
10
K/W
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm².
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
emitter cut-off current
h_FE
DC current gain
V_CEsat
V_BEsat
collector-emitter saturation
voltage
base-emitter saturation voltage
f_T
transition frequency
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
I_E = 0; V_CB = −40 V
I_E = 0; V_CB = −40 V; T_j = 150 °C
I_C = 0; V_EB = −5 V
I_C = −0.5 A; V_CE = −12 V; note 1; see Fig.2
I_C = −2 A; V_CE = −1 V; note 1; see Fig.2
I_C = −500 mA; I_B = −50 mA; note 1
I_C = −2 A; I_B = −200 mA; note 1
I_C = −500 mA; I_B = −50 mA; note 1
I_C = −2 A; I_B = −200 mA; note 1
V_CE = −5 V; I_C = −250 mA; f = 100 MHz
MIN.
−
−
−
40
20
−
−
−
−
60
MAX. UNIT
−50
−10
−50
−
−
−300
−700
−1. 2
−1. 5
−
nA
µA
nA
mV
mV
V
V
MHz
1999 Apr 23
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