BDP32 Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP medium power transistor

Philips Semiconductors
PNP medium power transistor
Product specification
BDP32
FEATURES
• High current (max. 3 A)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose medium power applications.
DESCRIPTION
PNP medium power transistor in a SOT223 plastic
package. NPN complement: BDP31.
PINNING
PIN
1
2,4
3
base
collector
emitter
DESCRIPTION
handbook, halfpage
4
2, 4
1
3
1
2
3
Top view
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−45
−45
−5
−3
−6
−0.5
1.35
+150
150
+150
UNIT
V
V
V
A
A
A
W
°C
°C
°C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm².
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
1999 Apr 23
2