BCV28 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP Darlington transistors

Philips Semiconductors
PNP Darlington transistors
Product specification
BCV28; BCV48
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_{th j-a}
R_{th j-s}
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
96
K/W
16
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm².
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
V_BEon
f_T
collector cut-off current
BCV28
BCV48
emitter cut-off current
DC current gain
BCV28
BCV48
DC current gain
BCV28
BCV48
DC current gain
BCV28
BCV48
DC current gain
BCV28
BCV48
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
CONDITIONS
MIN. TYP. MAX. UNIT
I_E = 0; V_CB = −30 V
I_E = 0; V_CB = −60 V
I_C = 0; V_BE = −10 V
I_C = −1 mA; V_CE = −5 V; see Fig.2
I_C = −10 mA; V_CE = −5 V; see Fig.2
I_C = −100 mA; V_CE = −5 V; see Fig.2
I_C = −500 mA; V_CE = −5 V; see Fig.2
I_C = −100 mA; I_B = −0.1 mA
−
−
−
−
−
−
4000 −
2000 −
10000 −
4000 −
20000 −
10000 −
4000 −
2000 −
−
−
−100 nA
−100 nA
−100 nA
−
−
−
−
−
−
−
−
−1 V
I_C = −100 mA; I_B = −0.1 mA
I_C = −10 mA; I_B = −5 mA
I_C = −30 mA; V_CE = −5 V;
f = 100 MHz
−
−
−1.5 V
−
−
−1.4 V
−
220 −
MHz
1999 Apr 08
3