BCV28 Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP Darlington transistors

Philips Semiconductors
PNP Darlington transistors
Product specification
BCV28; BCV48
FEATURES
• Very high DC current gain (min. 10000)
• High current (max. 500 mA)
• Low voltage (max. 60 V).
APPLICATIONS
• Where very high amplification is required.
DESCRIPTION
PNP Darlington transistor in a SOT89 plastic package.
NPN complements: BCV29 and BCV49.
MARKING
TYPE NUMBER
BCV28
BCV48
MARKING CODE
ED
EE
PINNING
PIN
1
2
3
DESCRIPTION
emitter
collector
base
handbook, halfpage
1
2
3
Bottom view
3
2
TR1
TR2
1
MAM301
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
V_CBO
V_CES
V_EBO
I_C
I_CM
I_B
P_tot
T_stg
T_j
T_amb
collector-base voltage
BCV28
BCV48
collector-emitter voltage
BCV28
BCV48
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
−
−
V_BE = 0
−
−
open collector
−
−
−
−
T_amb ≤ 25 °C; note 1 −
−65
−
−65
−40
V
−80
V
−30
V
−60
V
−10
V
−500 mA
−800 mA
−100 mA
1.3
W
+150 °C
150
°C
+150 °C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm².
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
1999 Apr 08
2