BCM847BV Datasheet, PDF (3/15 Pages) NXP Semiconductors – NPN/NPN matched double transistors

Philips Semiconductors
BCM847BV/BS/DS
NPN/NPN matched double transistors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
SOT666
open emitter
open base
open collector
single pulse;
t_p ≤ 1 ms
T_amb ≤ 25 °C
-
-
-
-
-
[1][2] _-
SOT363
[1] _-
SOT457
[1] _-
Per device
P_tot
total power dissipation
T_amb ≤ 25 °C
SOT666
[1][2] _-
SOT363
[1] _-
SOT457
[1] _-
T_j
junction temperature
-
T_amb
ambient temperature
−65
T_stg
storage temperature
−65
Max Unit
50
V
45
V
6
V
100 mA
200 mA
200 mW
200 mW
250 mW
300 mW
300 mW
380 mW
150 °C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max Unit
Per transistor
R_th(j-a)
thermal resistance from in free air
junction to ambient
SOT666
[1][2] _-
-
625
K/W
SOT363
[1] _-
-
625
K/W
SOT457
[1] _-
-
500
K/W
BCM847BV_BS_DS_5
Product data sheet
Rev. 05 — 27 June 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
3 of 15