BC875 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN Darlington transistors

Philips Semiconductors
NPN Darlington transistors
Product specification
BC875; BC879
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
150
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CES
I_EBO
h_FE
V_CEsat
V_BEsat
f_T
collector cut-off current
BC875
BC879
V_BE = 0; V_CE = 45 V
V_BE = 0; V_CE = 80 V
−
−
50
−
−
50
emitter cut-off current
DC current gain
I_C = 0; V_EB = 4 V
−
−
50
I_C = 150 mA; V_CE = 10 V; see Fig.2 1000 −
−
I_C = 0.5 A; V_CE = 10 V; see Fig.2 2000 −
−
collector-emitter saturation voltage
base-emitter saturation voltage
I_C = 0.5 A; I_B = 0.5 mA
I_C = 1 A; I_B = 1 mA
I_C = 1 A; I_B = 1 mA
−
−
1.3
−
−
1.8
−
−
2.2
transition frequency
I_C = 0.5 A; V_CE = 5 V; f = 100 MHz −
200 −
Switching times (between 10% and 90% levels)
nA
nA
nA
V
V
V
MHz
t_on
turn-on time
t_off
turn-off time
I_Con = 500 mA; I_Bon = 0.5 mA;
I_Boff = −0.5 mA
−
500 −
ns
−
1300 −
ns
1999 May 28
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