BC875 Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN Darlington transistors

Philips Semiconductors
NPN Darlington transistors
Product specification
BC875; BC879
FEATURES
• High DC current gain (min. 1000)
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
APPLICATIONS
• Relay drivers.
DESCRIPTION
NPN Darlington transistor in a TO-92 (SOT54) plastic
package. PNP complement: BC878.
PINNING
PIN
1
2
3
base
collector
emitter
DESCRIPTION
handbook, halfpage
1
2
3
2
1
MAM307
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V_CBO
V_CES
V_EBO
I_C
I_CM
I_B
P_tot
T_stg
T_j
T_amb
PARAMETER
collector-base voltage
BC875
BC879
collector-emitter voltage
BC875
BC879
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
V_BE = 0
open collector
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
−
60
V
−
100
V
−
45
V
−
80
V
−
5
V
−
1
A
−
2
A
−
0.2
A
−
0.83
W
−65
+150
°C
−
150
°C
−65
+150
°C
1999 May 28
2