BC869 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP medium power transistor

Philips Semiconductors
PNP medium power transistor
Product specification
BC869
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_{th j-a}
R_{th j-s}
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
93
K/W
13
K/W
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm².
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
emitter cut-off current
h_FE
DC current gain
V_CEsat
V_BE
f_T
DC current gain
BC869-16
BC869-25
collector-emitter saturation
voltage
base-emitter voltage
transition frequency
CONDITIONS
I_E = 0; V_CB = −25 V
I_E = 0; V_CB = −25 V; T_j = 150 °C
I_C = 0; V_EB = −5 V
I_C = −5 mA; V_CE = −10 V; see Fig.2
I_C = −500 mA; V_CE = −1 V; see Fig.2
I_C = −1 A; V_CE = −1 V; see Fig.2
I_C = −500 mA; V_CE = −1 V; see Fig.2
I_C = −1 A; I_B = −100 mA
MIN. TYP. MAX. UNIT
−
−
−
−
−
−
50 −
100 −
60 −
−100 nA
−10 µA
−100 nA
−
375
−
100 −
160 −
−
−
250
375
−500 mV
I_C = −5 mA; V_CE = −10 V
−
I_C = −1 A; V_CE = −1 V
−
I_C = −10 mA; V_CE = −5 V; f = 100 MHz 40
−620 −
−
−1
−
−
mV
V
MHz
1999 Apr 08
3