BC869 Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP medium power transistor

Philips Semiconductors
PNP medium power transistor
Product specification
BC869
FEATURES
• High current (max. 1 A)
• Low voltage (max. 20 V).
APPLICATIONS
• Low voltage, high current LF applications.
PINNING
PIN
1
2
3
emitter
collector
base
DESCRIPTION
DESCRIPTION
PNP medium power transistor in a SOT89 plastic
package. NPN complement: BC868.
MARKING
TYPE NUMBER
BC869
BC869-16
BC869-25
MARKING CODE
CEC
CGC
CHC
handbook, halfpage
2
3
1
1
2
Bottom view
3
MAM297
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−32
−20
−5
−1
−2
−200
1.35
+150
150
+150
UNIT
V
V
V
A
A
mA
W
°C
°C
°C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm².
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
1999 Apr 08
2