BC859W Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP general purpose transistors

Philips Semiconductors
PNP general purpose transistors
Product specification
BC859W; BC860W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
625
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
h_FE
V_CEsat
V_BE
emitter cut-off current
DC current gain
BC859W; BC860W
BC859BW; BC860BW
BC859CW; BC860CW
collector-emitter saturation
voltage
base-emitter voltage
C_c
collector capacitance
C_e
emitter capacitance
f_T
transition frequency
F
noise figure;
BC859W; BC860W;
BC859BW; BC860BW;
BC859CW; BC860CW
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
I_E = 0; V_CB = −30 V
I_E = 0; V_CB = −30 V; T_j = 150 °C
I_C = 0; V_EB = −5 V
I_C = −2 mA; V_CE = −5 V;
see Figs 2 and 3
I_C = −10 mA; I_B = −0.5 mA
I_C = −100 mA; I_B = −5 mA; note 1
I_C = −2 mA; V_CE = −5 V
I_C = −10 mA; V_CE = −5 V
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz
I_C = i_c = 0; V_EB = −500 mV; f = 1 MHz
I_C = −10 mA; V_CE = −5 V; f = 100 MHz
I_C = −200 µA; V_CE = −5 V; R_S = 2 kΩ;
f = 10 Hz to 15.7 kHz
I_C = −200 µA; V_CE = −5 V; R_S = 2 kΩ;
f = 1 kHz; B = 200 Hz
MIN.
−
−
−
220
220
420
−
−
600
−
−
−
100
−
−
TYP. MAX. UNIT
−
−15 nA
−
−4 µA
−
−100 nA
−
800
−
475
−
800
−
−300 mV
−
−650 mV
−
750 mV
−
820 mV
−
5
pF
10 −
pF
−
−
MHz
−
4
dB
−
4
dB
1999 Apr 12
3