BC859W Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP general purpose transistors

Philips Semiconductors
PNP general purpose transistors
Product specification
BC859W; BC860W
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP transistor in a SOT323 plastic package.
handbook, halfpage
3
NPN complements: BC849W and BC850W.
3
MARKING
TYPE
NUMBER
BC859W
BC859BW
BC859CW
MARKING
CODE
4D∗
4B∗
4C∗
TYPE
NUMBER
BC860W
BC860BW
BC860CW
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
MARKING
CODE
4H∗
4F∗
4G∗
1
Top view
1
2
2
MAM048
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
collector-base voltage
BC859W
BC860W
collector-emitter voltage
BC859W
BC860W
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
−
−30
V
−
−50
V
−
−30
V
−
−45
V
−
−5
V
−
−100
mA
−
−200
mA
−
−200
mA
−
200
mW
−65
+150
°C
−
150
°C
−65
+150
°C
1999 Apr 12
2