BC857BS Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP general purpose double transistor

Philips Semiconductors
PNP general purpose double transistor
Product specification
BC857BS
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Per device
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
416
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per transistor
I_CBO
collector cut-off current
I_EBO
h_FE
V_CEsat
V_BEsat
V_BE
C_c
C_e
f_T
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
I_E = 0; V_CB = −30 V
I_E = 0; V_CB = −30 V; T_j = 150 °C
I_C = 0; V_EB = −5 V
I_C = −2 mA; V_CE = −5 V
I_C = −10 mA; I_B = −0.5 mA
I_C = −100 mA; I_B = −5 mA; note 1
I_C = −10 mA; I_B = −0.5 mA
I_C = −2 mA; V_CE = −5 V
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz
I_C = i_c = 0; V_EB = −500 mV; f = 1 MHz
I_C = −10 mA; V_CE = −5 V; f = 100 MHz
−
−
−
200
−
−
−
−600
−
−
100
−
−
−
−
−
−
−755
−655
−
10
−
−15
−5
−100
450
−100
−400
−
−750
2.2
−
−
nA
µA
nA
mV
mV
mV
mV
pF
pF
MHz
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
1999 Apr 26
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