BC857BS Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP general purpose double transistor

Philips Semiconductors
PNP general purpose double transistor
Product specification
BC857BS
FEATURES
• Low collector capacitance
• Low collector-emitter saturation voltage
• Closely matched current gain
• Reduces number of components and boardspace
• No mutual interference between the transistors.
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP double transistor in an SC-88; SOT363 plastic
package. NPN complement: BC847BS.
MARKING
TYPE NUMBER
BC857BS
MARKING CODE
3Ft
handbook, halfpage
654
12 3
Top view
65 4
TR2
TR1
123
MAM339
Fig.1 Simplified outline (SC-88; SOT363)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per transistor
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Per device
P_tot
total power dissipation
open emitter
open base
open collector
T_amb ≤ 25 °C
T_amb ≤ 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
−
−50
V
−
−45
V
−
−5
V
−
−100 mA
−
−200 mA
−
−200 mA
−
200
mW
−65
+150 °C
−
150
°C
−65
+150 °C
−
300
mW
1999 Apr 26
2