BC369 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP medium power transistor

Philips Semiconductors
PNP medium power transistor
Product specification
BC369
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
150
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
I_CBO
I_EBO
h_FE
V_CEsat
V_BE
f_T
hh----_{FF---EE---12-}
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
BC369-16
I_E = 0; V_CB = −25 V
−
I_E = 0; V_CB = −25 V; T_j = 150 °C
−
I_C = 0; V_EB = −5 V
−
I_C = −5 mA; V_CE = −10 V
50
I_C = −500 mA; V_CE = −1 V; see Fig.2 85
I_C = −1 A; V_CE = −1 V; see Fig.2
60
I_C = −500 mA; V_CE = −1 V; see Fig.2
100
BC369-25
160
collector-emitter saturation voltage
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
I_C = −1 A; I_B = −100 mA
−
I_C = −5 mA; V_CE = −10 V
−
I_C = −1 A; V_CE = −1 V
−
I_C = −10 mA; V_CE = −5 V; f = 100 MHz 40
I_C = 500 mA; V_CE = 1 V
−
MAX.
−100
−10
−100
−
375
−
UNIT
nA
µA
nA
250
375
−0.5 V
−0.7 V
−1
V
−
MHz
1.6
1999 Apr 26
3