BC369 Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP medium power transistor

Philips Semiconductors
PNP medium power transistor
Product specification
BC369
FEATURES
PINNING
• High current (max. 1 A)
• Low voltage (max. 20 V).
APPLICATIONS
• General purpose switching and amplification
• Power applications such as audio output stages.
DESCRIPTION
PIN
DESCRIPTION
1
base
2
collector
3
emitter
handbook, halfpage1
2
3
2
1
NPN medium power transistor in a TO-92; SOT54 plastic
package. PNP complement: BC368.
3
MAM285
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−32
−20
−5
−1
−2
−200
0.83
+150
150
+150
UNIT
V
V
V
A
A
mA
W
°C
°C
°C
1999 Apr 26
2