BC107 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN general purpose transistors

Philips Semiconductors
NPN general purpose transistors
Product specification
BC107; BC108; BC109
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
collector-base voltage
BC107
BC108; BC109
collector-emitter voltage
BC107
BC108; BC109
emitter-base voltage
BC107
BC108; BC109
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
T_amb ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
R_{th j-c}
thermal resistance from junction to ambient note 1
thermal resistance from junction to case
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
−
50
V
−
30
V
−
45
V
−
20
V
−
6
V
−
5
V
−
100
mA
−
200
mA
−
200
mA
−
300
mW
−65
+150
°C
−
175
°C
−65
+150
°C
VALUE
0.5
0.2
UNIT
K/mW
K/mW
1997 Sep 03
3