BC107 Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN general purpose transistors

Philips Semiconductors
NPN general purpose transistors
Product specification
BC107; BC108; BC109
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a TO-18; SOT18 metal package.
PNP complement: BC177.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to the case
handbook, halfpa₁ge
2
3
3
2
MAM264
1
Fig.1 Simplified outline (TO-18; SOT18)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
collector-base voltage
BC107
BC108; BC109
V_CEO
collector-emitter voltage
BC107
BC108; BC109
I_CM
peak collector current
P_tot
total power dissipation
h_FE
DC current gain
BC107
BC108
BC109
f_T
transition frequency
CONDITIONS
open emitter
open base
T_amb ≤ 25 °C
I_C = 2 mA; V_CE = 5 V
I_C = 10 mA; V_CE = 5 V; f = 100 MHz
MIN. MAX. UNIT
−
50
V
−
30
V
−
45
V
−
20
V
−
200
mA
−
300
mW
110
450
110
800
200
800
100
−
MHz
1997 Sep 03
2